Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaO(x) bipolar resistive switching

Recent advances in oxide-based resistive switching devices have made these devices very promising candidates for future nonvolatile memory applications. However, several key issues remain that affect resistive switching. One is the need for generic alternative electrodes with thermally robust resist...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Kim, Taeyoon, Baek, Gwangho, Yang, Seungmo, Yang, Jung Yup, Yoon, Kap Soo, Kim, Soo Gil, Lee, Jae Yeon, Im, Hyun Sik, Hong, Jin Pyo
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2018
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Article
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5986858/
https://ncbi.nlm.nih.gov/pubmed/29867108
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-018-26997-y
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