Novel Vertical 3D Structure of TaO(x)-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation

A novel vertical 3D RRAM structure with greatly improved reliability behavior is proposed and experimentally demonstrated through basically compatible process featuring self-localized switching region by sidewall electrode oxidation. Compared with the conventional structure, due to the effective con...

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Publicat a:Sci Rep
Autors principals: Yu, Muxi, Cai, Yimao, Wang, Zongwei, Fang, Yichen, Liu, Yefan, Yu, Zhizhen, Pan, Yue, Zhang, Zhenxing, Tan, Jing, Yang, Xue, Li, Ming, Huang, Ru
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group 2016
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4756706/
https://ncbi.nlm.nih.gov/pubmed/26884054
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep21020
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