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Novel Vertical 3D Structure of TaO(x)-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation
A novel vertical 3D RRAM structure with greatly improved reliability behavior is proposed and experimentally demonstrated through basically compatible process featuring self-localized switching region by sidewall electrode oxidation. Compared with the conventional structure, due to the effective con...
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| I publikationen: | Sci Rep |
|---|---|
| Huvudupphovsmän: | , , , , , , , , , , , |
| Materialtyp: | Artigo |
| Språk: | Inglês |
| Publicerad: |
Nature Publishing Group
2016
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| Ämnen: | |
| Länkar: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4756706/ https://ncbi.nlm.nih.gov/pubmed/26884054 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep21020 |
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