Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup

This study is carried out in the context of III–V semiconductor monolithic integration on silicon for optoelectronic device applications. X-ray diffraction is combined with atomic force microscopy and scanning transmission electron microscopy for structural characterization of GaP nanolayers grown o...

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Veröffentlicht in:J Appl Crystallogr
Hauptverfasser: Ping Wang, Yan, Letoublon, Antoine, Nguyen Thanh, Tra, Bahri, Mounib, Largeau, Ludovic, Patriarche, Gilles, Cornet, Charles, Bertru, Nicolas, Le Corre, Alain, Durand, Olivier
Format: Artigo
Sprache:Inglês
Veröffentlicht: International Union of Crystallography 2015
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Research Papers
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC4453976/
https://ncbi.nlm.nih.gov/pubmed/26089763
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S1600576715009954
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