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Formation Energies of Antiphase Boundaries in GaAs and GaP: An ab Initio Study
Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V heterostructures on silicon or germanium substrates. The formation energies of {110}, {111}, {112}...
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| Autors principals: | , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Molecular Diversity Preservation International (MDPI)
2009
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2801988/ https://ncbi.nlm.nih.gov/pubmed/20054465 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ijms10125104 |
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