טוען...
Formation Energies of Antiphase Boundaries in GaAs and GaP: An ab Initio Study
Electronic and structural properties of antiphase boundaries in group III-V semiconductor compounds have been receiving increased attention due to the potential to integration of optically-active III-V heterostructures on silicon or germanium substrates. The formation energies of {110}, {111}, {112}...
שמור ב:
| Main Authors: | , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Molecular Diversity Preservation International (MDPI)
2009
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2801988/ https://ncbi.nlm.nih.gov/pubmed/20054465 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ijms10125104 |
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