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Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup
This study is carried out in the context of III–V semiconductor monolithic integration on silicon for optoelectronic device applications. X-ray diffraction is combined with atomic force microscopy and scanning transmission electron microscopy for structural characterization of GaP nanolayers grown o...
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| Publicado no: | J Appl Crystallogr |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
International Union of Crystallography
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4453976/ https://ncbi.nlm.nih.gov/pubmed/26089763 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S1600576715009954 |
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