טוען...
Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction
Strained germanium grown on silicon with nonstandard surface orientations like (011) or (111) is a promising material for various semiconductor applications, for example complementary metal-oxide semiconductor transistors. However, because of the large mismatch between the lattice constants of silic...
שמור ב:
| הוצא לאור ב: | J Appl Crystallogr |
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| Main Authors: | , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
International Union of Crystallography
2015
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4453970/ https://ncbi.nlm.nih.gov/pubmed/26089757 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S1600576715005397 |
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