Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction

Strained germanium grown on silicon with nonstandard surface orientations like (011) or (111) is a promising material for various semiconductor applications, for example complementary metal-oxide semiconductor transistors. However, because of the large mismatch between the lattice constants of silic...

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Bibliographic Details
Published in:J Appl Crystallogr
Main Authors: Benediktovitch, Andrei, Zhylik, Alexei, Ulyanenkova, Tatjana, Myronov, Maksym, Ulyanenkov, Alex
Format: Artigo
Language:Inglês
Published: International Union of Crystallography 2015
Subjects:
Research Papers
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC4453970/
https://ncbi.nlm.nih.gov/pubmed/26089757
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S1600576715005397
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