A carregar...
Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction
Strained germanium grown on silicon with nonstandard surface orientations like (011) or (111) is a promising material for various semiconductor applications, for example complementary metal-oxide semiconductor transistors. However, because of the large mismatch between the lattice constants of silic...
Na minha lista:
| Publicado no: | J Appl Crystallogr |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
International Union of Crystallography
2015
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4453970/ https://ncbi.nlm.nih.gov/pubmed/26089757 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1107/S1600576715005397 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|