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Investigation on the passivated Si/Al(2)O(3) interface fabricated by non-vacuum spatial atomic layer deposition system
Currently, aluminum oxide stacked with silicon nitride (Al(2)O(3)/SiN(x):H) is a promising rear passivation material for high-efficiency P-type passivated emitter and rear cell (PERC). It has been indicated that atomic layer deposition system (ALD) is much more suitable to prepare high-quality Al(2)...
שמור ב:
| הוצא לאור ב: | Nanoscale Res Lett |
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| Main Authors: | , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer US
2015
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4385260/ https://ncbi.nlm.nih.gov/pubmed/25852389 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0803-9 |
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