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Optical properties and bandgap evolution of ALD HfSiO(x) films

Hafnium silicate films with pure HfO(2) and SiO(2) samples as references were fabricated by atomic layer deposition (ALD) in this work. The optical properties of the films as a function of the film composition were measured by vacuum ultraviolet (VUV) ellipsometer in the energy range of 0.6 to 8.5 e...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Yang, Wen, Fronk, Michael, Geng, Yang, Chen, Lin, Sun, Qing-Qing, Gordan, Ovidiu D, zhou, Peng, Zahn, Dietrich RT, Zhang, David Wei
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2015
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4385042/
https://ncbi.nlm.nih.gov/pubmed/25852329
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-014-0724-z
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