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Optical properties and bandgap evolution of ALD HfSiO(x) films
Hafnium silicate films with pure HfO(2) and SiO(2) samples as references were fabricated by atomic layer deposition (ALD) in this work. The optical properties of the films as a function of the film composition were measured by vacuum ultraviolet (VUV) ellipsometer in the energy range of 0.6 to 8.5 e...
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| Vydáno v: | Nanoscale Res Lett |
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| Hlavní autoři: | , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer US
2015
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4385042/ https://ncbi.nlm.nih.gov/pubmed/25852329 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-014-0724-z |
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