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Charge transport in ion-gated mono-, bi-, and trilayer MoS(2) field effect transistors

Charge transport in MoS(2) in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS(2) emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically e...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Chu, Leiqiang, Schmidt, Hennrik, Pu, Jiang, Wang, Shunfeng, Özyilmaz, Barbaros, Takenobu, Taishi, Eda, Goki
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2014
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4252908/
https://ncbi.nlm.nih.gov/pubmed/25465059
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep07293
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