Effects of Charge Trapping at the MoS(2)–SiO(2) Interface on the Stability of Subthreshold Swing of MoS(2) Field Effect Transistors

Lignende værker

• Effects of Charge Trapping at the MoS₂–SiO₂ Interface on the Stability of Subthreshold Swing of MoS₂ Field Effect Transistors
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• Emulating synaptic response in n- and p-channel MoS(2) transistors by utilizing charge trapping dynamics
  af: Bhattacharjee, Shubhadeep, et al.
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• On current transients in MoS(2) Field Effect Transistors
  af: Macucci, Massimo, et al.
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• Charge transport in ion-gated mono-, bi-, and trilayer MoS(2) field effect transistors
  af: Chu, Leiqiang, et al.
  Udgivet: (2014)
• Advances in MoS(2)-Based Field Effect Transistors (FETs)
  af: Tong, Xin, et al.
  Udgivet: (2015)