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Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz

In this work, the dielectric properties of porous Si for its use as a local substrate material for the integration on the Si wafer of millimeter-wave devices were investigated in the frequency range 140 to 210 GHz. Broadband electrical characterization of coplanar waveguide transmission lines (CPW T...

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Detalhes bibliográficos
Main Authors: Sarafis, Panagiotis, Nassiopoulou, Androula Galiouna
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2014
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4148683/
https://ncbi.nlm.nih.gov/pubmed/25206316
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-418
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