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Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics
In this paper, we investigate the formation kinetics of Si nanowires [SiNWs] on lithographically defined areas using a single-step metal-assisted chemical etching process in an aqueous HF/AgNO(3 )solution. We show that the etch rate of Si, and consequently, the SiNW length, is much higher on the lit...
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| Hlavní autoři: | , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer
2011
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3339842/ https://ncbi.nlm.nih.gov/pubmed/22087735 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-597 |
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