A carregar...

Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics

In this paper, we investigate the formation kinetics of Si nanowires [SiNWs] on lithographically defined areas using a single-step metal-assisted chemical etching process in an aqueous HF/AgNO(3 )solution. We show that the etch rate of Si, and consequently, the SiNW length, is much higher on the lit...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Main Authors: Nassiopoulou, Androula Galiouna, Gianneta, Violetta, Katsogridakis, Charalambos
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2011
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3339842/
https://ncbi.nlm.nih.gov/pubmed/22087735
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-597
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!