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Thermal conductivity of highly porous Si in the temperature range 4.2 to 20 K
We report on experimental results of the thermal conductivity k of highly porous Si in the temperature range 4.2 to 20 K, obtained using the direct current (dc) method combined with thermal finite element simulations. The reported results are the first in the literature for this temperature range. I...
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| Principais autores: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2014
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4109793/ https://ncbi.nlm.nih.gov/pubmed/25114631 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-318 |
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