Sarafis, P., & Nassiopoulou, A. G. (2014). Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz. Springer.
Citação norma ChicagoSarafis, Panagiotis, and Androula Galiouna Nassiopoulou. Dielectric Properties of Porous Silicon for Use As a Substrate for the On-chip Integration of Millimeter-wave Devices in the Frequency Range 140 to 210 GHz. Springer, 2014.
MLA citiranjeSarafis, Panagiotis, and Androula Galiouna Nassiopoulou. Dielectric Properties of Porous Silicon for Use As a Substrate for the On-chip Integration of Millimeter-wave Devices in the Frequency Range 140 to 210 GHz. Springer, 2014.
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