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TaO(x)-based resistive switching memories: prospective and challenges
Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaO(x) is one of the prosp...
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| Main Authors: | , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer
2013
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4124699/ https://ncbi.nlm.nih.gov/pubmed/24107610 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-418 |
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