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Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition
The RESET process of NbAlO-based resistive switching memory devices fabricated by atomic layer deposition is investigated at low temperatures from 80 to 200 K. We observed that the conduction mechanism of high resistance state changed from hopping conduction to Frenkel-Poole conduction with elevated...
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| Main Authors: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2013
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3667048/ https://ncbi.nlm.nih.gov/pubmed/23421401 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-91 |
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