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Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition
High-quality Ti-doped ZnO films were grown on Si, thermally grown SiO(2), and quartz substrates by atomic layer deposition (ALD) at 200°C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, and deionized water were sources for Ti, Zn, and O, respectively. The Ti doping was th...
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| Main Authors: | , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2013
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3630000/ https://ncbi.nlm.nih.gov/pubmed/23442766 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-108 |
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