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Improved Ferroelectric Performance of Mg-Doped LiNbO(3) Films by an Ideal Atomic Layer Deposited Al(2)O(3) Tunnel Switch Layer
Bilayer structures composed of 5% Mg-doped LiNbO(3) single-crystal films and ultrathin Al(2)O(3) layers with thickness ranging from 2 to 6 nm have been fabricated by using ion slicing technique combined with atomic layer deposition method. The transient domain switching current measurement results r...
שמור ב:
| הוצא לאור ב: | Nanoscale Res Lett |
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| Main Authors: | , , , , , |
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer US
2019
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| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6468035/ https://ncbi.nlm.nih.gov/pubmed/30993547 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-2970-6 |
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