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SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithography
A detailed process characterization of SML electron beam resist for high-aspect-ratio nanopatterning at high sensitivity is presented. SML contrast curves were generated for methyl isobutyl ketone (MIBK), MIBK/isopropyl alcohol (IPA) (1:3), IPA/water (7:3), n-amyl acetate, xylene, and xylene/methano...
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| Hlavní autoři: | , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer
2013
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3617037/ https://ncbi.nlm.nih.gov/pubmed/23531370 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-139 |
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