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Polystyrene negative resist for high-resolution electron beam lithography
We studied the exposure behavior of low molecular weight polystyrene as a negative tone electron beam lithography (EBL) resist, with the goal of finding the ultimate achievable resolution. It demonstrated fairly well-defined patterning of a 20-nm period line array and a 15-nm period dot array, which...
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| Main Authors: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2011
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211865/ https://ncbi.nlm.nih.gov/pubmed/21749679 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-446 |
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