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Electromigration failure in a copper dual-damascene structure with a through silicon via
Electromigration induced failure development in a copper dual-damascene structure with a through silicon via (TSV) located at the cathode end of the line is studied. The resistance change caused by void growth under the TSV and the interconnect lifetime estimation are modeled based on analytical exp...
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| Main Authors: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Pergamon Press
2012
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3608028/ https://ncbi.nlm.nih.gov/pubmed/23564974 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.microrel.2012.07.021 |
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