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Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon
Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor...
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| 主要な著者: | , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer
2012
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3497612/ https://ncbi.nlm.nih.gov/pubmed/22901341 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-464 |
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