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Plasma-deposited fluoropolymer film mask for local porous silicon formation

The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unl...

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Detalhes bibliográficos
Main Authors: Defforge, Thomas, Capelle, Marie, Tran-Van, François, Gautier, Gaël
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2012
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3443000/
https://ncbi.nlm.nih.gov/pubmed/22734507
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-344
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