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Plasma-deposited fluoropolymer film mask for local porous silicon formation
The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unl...
में बचाया:
| मुख्य लेखकों: | , , , |
|---|---|
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Springer
2012
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3443000/ https://ncbi.nlm.nih.gov/pubmed/22734507 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-344 |
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