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Plasma-deposited fluoropolymer film mask for local porous silicon formation
The study of an innovative fluoropolymer masking layer for silicon anodization is proposed. Due to its high chemical resistance to hydrofluoric acid even under anodic bias, this thin film deposited by plasma has allowed the formation of deep porous silicon regions patterned on the silicon wafer. Unl...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer
2012
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3443000/ https://ncbi.nlm.nih.gov/pubmed/22734507 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-344 |
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