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RF performances of inductors integrated on localized p(+)-type porous silicon regions

To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is int...

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Detalhes bibliográficos
Main Authors: Capelle, Marie, Billoué, Jérôme, Poveda, Patrick, Gautier, Gaël
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2012
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC3506491/
https://ncbi.nlm.nih.gov/pubmed/23009746
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-523
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