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Femtosecond pulsed laser deposition of silicon thin films
Optimisation of femtosecond pulsed laser deposition parameters for the fabrication of silicon thin films is discussed. Substrate temperature, gas pressure and gas type are used to better understand the deposition process and optimise it for the fabrication of high-quality thin films designed for opt...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2013
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3693986/ https://ncbi.nlm.nih.gov/pubmed/23758871 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-272 |
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