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Femtosecond pulsed laser deposition of silicon thin films

Optimisation of femtosecond pulsed laser deposition parameters for the fabrication of silicon thin films is discussed. Substrate temperature, gas pressure and gas type are used to better understand the deposition process and optimise it for the fabrication of high-quality thin films designed for opt...

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Autors principals: Murray, Matthew, Jose, Gin, Richards, Billy, Jha, Animesh
Format: Artigo
Idioma:Inglês
Publicat: Springer 2013
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Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC3693986/
https://ncbi.nlm.nih.gov/pubmed/23758871
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-272
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