Caricamento...
Effect of non-lattice oxygen on ZrO(2)-based resistive switching memory
ZrO(2)-based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. The Al/ZrO(2)/Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work. The thickness of the ZrO(2 )film is on...
Salvato in:
| Autori principali: | , , , |
|---|---|
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer
2012
|
| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3324381/ https://ncbi.nlm.nih.gov/pubmed/22416817 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-187 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !
|