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Effect of non-lattice oxygen on ZrO(2)-based resistive switching memory
ZrO(2)-based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. The Al/ZrO(2)/Pt resistive switching memory with bipolar resistive switching behavior is revealed in this work. The thickness of the ZrO(2 )film is on...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2012
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3324381/ https://ncbi.nlm.nih.gov/pubmed/22416817 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-187 |
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