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Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control
The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN/AlN quantum dots [QDs], a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an Al...
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| Main Authors: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2011
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3237329/ https://ncbi.nlm.nih.gov/pubmed/22136595 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-611 |
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