Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO(2)/SiO(2 )stack tunnel dielectrics for memory application

Ge nanocrystals (Ge-NCs) embedded in SiN dielectrics with HfO(2)/SiO(2 )stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV) ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge(+ )ion implantation energy. Two different energies...

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Autors principals: Sahu, Bhabani Shankar, Gloux, Florence, Slaoui, Abdelilah, Carrada, Marzia, Muller, Dominique, Groenen, Jesse, Bonafos, Caroline, Lhostis, Sandrine
Format: Artigo
Idioma:Inglês
Publicat: Springer 2011
Matèries:
Nano Express
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC3211230/
https://ncbi.nlm.nih.gov/pubmed/21711708
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-177
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