Sahu, B. S., Gloux, F., Slaoui, A., Carrada, M., Muller, D., Groenen, J., . . . Lhostis, S. (2011). Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO(2)/SiO(2 )stack tunnel dielectrics for memory application. Springer.
Chicago ZitierstilSahu, Bhabani Shankar, Florence Gloux, Abdelilah Slaoui, Marzia Carrada, Dominique Muller, Jesse Groenen, Caroline Bonafos, und Sandrine Lhostis. Effect of Ion Implantation Energy for the Synthesis of Ge Nanocrystals in SiN Films With HfO(2)/SiO(2 )stack Tunnel Dielectrics for Memory Application. Springer, 2011.
MLA ZitierstilSahu, Bhabani Shankar, et al. Effect of Ion Implantation Energy for the Synthesis of Ge Nanocrystals in SiN Films With HfO(2)/SiO(2 )stack Tunnel Dielectrics for Memory Application. Springer, 2011.