Sahu, B. S., Gloux, F., Slaoui, A., Carrada, M., Muller, D., Groenen, J., . . . Lhostis, S. (2011). Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO(2)/SiO(2 )stack tunnel dielectrics for memory application. Springer.
Citação norma ChicagoSahu, Bhabani Shankar, Florence Gloux, Abdelilah Slaoui, Marzia Carrada, Dominique Muller, Jesse Groenen, Caroline Bonafos, and Sandrine Lhostis. Effect of Ion Implantation Energy for the Synthesis of Ge Nanocrystals in SiN Films With HfO(2)/SiO(2 )stack Tunnel Dielectrics for Memory Application. Springer, 2011.
Deismireacht MLASahu, Bhabani Shankar, et al. Effect of Ion Implantation Energy for the Synthesis of Ge Nanocrystals in SiN Films With HfO(2)/SiO(2 )stack Tunnel Dielectrics for Memory Application. Springer, 2011.