ロード中...

Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study

In this work, the nucleation and growth of InAs nanowires on patterned SiO(2)/Si(111) substrates is studied. It is found that the nanowire yield is strongly dependent on the size of the etched holes in the SiO(2), where openings smaller than 180 nm lead to a substantial decrease in nucleation yield,...

詳細記述

保存先:
書誌詳細
主要な著者: Mandl, Bernhard, Dey, Anil W., Stangl, Julian, Cantoro, Mirco, Wernersson, Lars-Erik, Bauer, Günther, Samuelson, Lars, Deppert, Knut, Thelander, Claes
フォーマット: Artigo
言語:Inglês
出版事項: North-Holland Pub. Co 2011
主題:
オンライン・アクセス:https://ncbi.nlm.nih.gov/pmc/articles/PMC3191268/
https://ncbi.nlm.nih.gov/pubmed/22053114
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1016/j.jcrysgro.2011.08.023
タグ: タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!