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Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment
The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius, supersaturations, diffusion lengths and the tilt angle. Growth experiments are carried out on the GaAs(21...
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| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2010
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2956022/ https://ncbi.nlm.nih.gov/pubmed/21076695 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9698-7 |
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