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Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy

In this study, defect-free zinc blende GaAs nanowires on Si (111) by molecular beam epitaxy (MBE) growth are systematically studied through Au-assisted vapor-liquid-solid (VLS) method. The morphology, density, and crystal structure of GaAs nanowires were investigated as a function of substrate tempe...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Wang, Chiu-Yen, Hong, Yu-Chen, Ko, Zong-Jie, Su, Ya-Wen, Huang, Jin-Hua
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2017
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5400769/
https://ncbi.nlm.nih.gov/pubmed/28438011
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-017-2063-3
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