Carregant...
Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate
We attempted to control the incorporation of twin boundaries in self-catalyzed GaAs nanowires (NWs). Self-catalyzed GaAs NWs were grown on a Si substrate under various arsenic pressures using molecular beam epitaxy and the vapor-liquid-solid method. When the arsenic flux is low, wurtzite structures...
Guardat en:
| Autors principals: | , , |
|---|---|
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2012
|
| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3495757/ https://ncbi.nlm.nih.gov/pubmed/23043754 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-558 |
| Etiquetes: |
Afegir etiqueta
Sense etiquetes, Sigues el primer a etiquetar aquest registre!
|