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Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate
We attempted to control the incorporation of twin boundaries in self-catalyzed GaAs nanowires (NWs). Self-catalyzed GaAs NWs were grown on a Si substrate under various arsenic pressures using molecular beam epitaxy and the vapor-liquid-solid method. When the arsenic flux is low, wurtzite structures...
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| Hauptverfasser: | , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer
2012
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3495757/ https://ncbi.nlm.nih.gov/pubmed/23043754 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-558 |
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