Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy

MOS devices based on III-V semiconductors and thin high-k dielectric layers offer possibilities for improved transport properties. Here, we have studied the interface structure and chemical composition of realistic MOS gate stacks, consisting of a W or Pd metal film and a 6- or 12-nm-thick HfO2 laye...

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Hlavní autoři: O. Persson, E. Lind, E. Lundgren, J. Rubio-Zuazo, G. R. Castro, L.-E. Wernersson, A. Mikkelsen, R. Timm
Médium: Artigo
Jazyk:Inglês
Vydáno: AIP Publishing LLC 2013-07-01
Edice:AIP Advances
On-line přístup:http://link.aip.org/link/doi/10.1063/1.4817575
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