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Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
MOS devices based on III-V semiconductors and thin high-k dielectric layers offer possibilities for improved transport properties. Here, we have studied the interface structure and chemical composition of realistic MOS gate stacks, consisting of a W or Pd metal film and a 6- or 12-nm-thick HfO2 laye...
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| Autors principals: | , , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
AIP Publishing LLC
2013-07-01
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| Col·lecció: | AIP Advances |
| Accés en línia: | http://link.aip.org/link/doi/10.1063/1.4817575 |
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