Direct Growth of Wafer‐Scale Self‐Separated GaN on Reusable 2D Material Substrates
Abstract Free‐standing gallium nitride has been prepared using various methods; however, the removal of the original substrate is still challenging with low success rates. In this work, 2‐inch free‐standing GaN films are obtained by direct growth on a fluoro phlogopite mica by hydride vapor‐phase ep...
Na minha lista:
| Principais autores: | , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Wiley
2024-11-01
|
| coleção: | Advanced Science |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1002/advs.202406126 |
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|