Direct Growth of Wafer‐Scale Self‐Separated GaN on Reusable 2D Material Substrates
Abstract Free‐standing gallium nitride has been prepared using various methods; however, the removal of the original substrate is still challenging with low success rates. In this work, 2‐inch free‐standing GaN films are obtained by direct growth on a fluoro phlogopite mica by hydride vapor‐phase ep...
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| Asıl Yazarlar: | , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Wiley
2024-11-01
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| Seri Bilgileri: | Advanced Science |
| Konular: | |
| Online Erişim: | https://doi.org/10.1002/advs.202406126 |
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