Direct Growth of Wafer‐Scale Self‐Separated GaN on Reusable 2D Material Substrates
Abstract Free‐standing gallium nitride has been prepared using various methods; however, the removal of the original substrate is still challenging with low success rates. In this work, 2‐inch free‐standing GaN films are obtained by direct growth on a fluoro phlogopite mica by hydride vapor‐phase ep...
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| Hoofdauteurs: | , , |
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| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
Wiley
2024-11-01
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| Reeks: | Advanced Science |
| Onderwerpen: | |
| Online toegang: | https://doi.org/10.1002/advs.202406126 |
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