A stable monoclinic variant and resultant robust ferroelectricity in single-crystalline hafnia-based films
Abstract The ferroelectricity in nanoscale HfO2-based films enables their applications more promising than that of the perovskite oxides, taking into account the easy compatibility with the modern silicon-based semiconductor technology. However, the well-known polar orthorhombic phase is thermodynam...
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| Hlavní autoři: | , , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Portfolio
2025-10-01
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| Edice: | Nature Communications |
| On-line přístup: | https://doi.org/10.1038/s41467-025-63907-z |
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