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A stable monoclinic variant and resultant robust ferroelectricity in single-crystalline hafnia-based films

Abstract The ferroelectricity in nanoscale HfO2-based films enables their applications more promising than that of the perovskite oxides, taking into account the easy compatibility with the modern silicon-based semiconductor technology. However, the well-known polar orthorhombic phase is thermodynam...

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Bibliografske podrobnosti
Main Authors: Wan-Rong Geng, Yu-Jia Wang, Yin-Lian Zhu, Sirui Zhang, Huiqin Ma, Yun-Long Tang, Shi Tuo, Xiu-Liang Ma
Format: Artigo
Jezik:Inglês
Izdano: Nature Portfolio 2025-10-01
Serija:Nature Communications
Online dostop:https://doi.org/10.1038/s41467-025-63907-z
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