Effect of Grain Boundary Protrusion on Electrical Performance of Low Temperature Polycrystalline Silicon Thin Film Transistors

We studied the impact of grain boundary (GB) protrusion on the electrical properties of low temperature polycrystalline silicon thin film transistors. The analysis of atomic force microscopy and transmission electron microscopy images indicate the grain size of ~350 nm and a protrusion height of ~35...

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Autors principals:	Mohammad Masum Billah, Abu Bakar Siddik, Jung Bae Kim, Lai Zhao, Soo Young Choi, Dong Kil Yim, Jin Jang
Format:	Artigo
Idioma:	Inglês
Publicat:	IEEE 2019-01-01
Col·lecció:	IEEE Journal of the Electron Devices Society
Matèries:	Low temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) technology computer-aided design (TCAD)
Accés en línia:	https://ieeexplore.ieee.org/document/8695046/
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