Polycrystalline Silicon ISFETs on Glass Substrate
The Ion Sensitive Field Effect Transistor (ISFET) operation based onpolycrystalline silicon thin film transistors is reported. These devices can be fabricated oninexpensive disposable substrates such as glass or plastics and are, therefore, promisingcandidates for low cost single-use intelligent mul...
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| Principais autores: | , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
MDPI AG
2005-05-01
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| Serier: | Sensors |
| Fag: | |
| Online adgang: | http://www.mdpi.com/1424-8220/5/4/293/ |
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